APTM100DA18CT1G Microsemi Corporation, APTM100DA18CT1G Datasheet
APTM100DA18CT1G
Related parts for APTM100DA18CT1G
APTM100DA18CT1G Summary of contents
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... Drain - Source ON Resistance DSon P Maximum Power Dissipation D I Avalanche current (repetitive and non repetitive) AR These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM100DA18CT1G V = 1000V DSS R = 180mΩ typ @ Tj = 25°C DSon I = 40A @ Tc = 25°C D Application • ...
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... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight APTM100DA18CT1G = 25°C unless otherwise specified j Test Conditions T = 25°C V =1000V 125°C GS ...
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... See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Typical Mosfet Performance Curve Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.2 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0.05 0 0.00001 0.0001 APTM100DA18CT1G T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ⎟ ⎟ ...
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... =25° =500V =800V 100 200 300 400 500 Gate Charge (nC) APTM100DA18CT1G Low Voltage Output Characteristics 70 T =125° = & Drain to Source Voltage (V) DS Transfert Characteristics ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM100DA18CT1G Single Pulse 0.001 ...