APT22M100JCU3 Microsemi Corporation, APT22M100JCU3 Datasheet

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... Drain - Source ON Resistance DSon P Maximum Power Dissipation D I Avalanche current (repetitive and non repetitive) AR These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APT22M100JCU3 V = 1000V DSS R = 400mΩ typ @ Tj = 25°C DSon I = 22A @ Tc = 25°C D Application • ...

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... T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight APT22M100JCU3 = 25°C unless otherwise specified j Test Conditions T = 25°C V =1000V 125°C ...

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... Typical Mosfet Performance Curve Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.3 0.9 0.7 0.2 0.5 0.1 0.3 0.1 0.05 0 0.00001 0.0001 rectangular Pulse Duration (Seconds) APT22M100JCU3 W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) Anode Source Dimensions in Millimeters and (Inches) Single P ulse ...

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... =16A =500V =800V 120 160 200 240 280 Gate Charge (nC) www.microsemi.com APT22M100JCU3 Low Voltage Output Characteristics 35 T =125° = & Drain to Source Voltage (V) DS Transfert Characteristics ...

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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT22M100JCU3 Single Pulse 0.001 ...