APT60GL120JU3 Microsemi Corporation, APT60GL120JU3 Datasheet

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... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APT60GL120JU3 Application • AC and DC motor control • Switched Mode Power Supplies Features • Trench + Field Stop IGBT 4 Technology ...

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... V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APT60GL120JU3 = 25°C unless otherwise specified j Test Conditions 1200V 25° 15V 50A T = 150°C ...

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... ISOTOP® registered trademark of ST Microelectronics NV W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) Anode Emitter Dimensions in Millimeters and (Inches) www.microsemi.com APT60GL120JU3 Min Typ Max Unit IGBT 0.53 °C/W Diode 1.2 20 2500 V -55 175 °C 300 1.5 N.m 29 ...

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... V =15V 50A 150° Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APT60GL120JU3 Output Characteristics T = 150° =19V GE V =15V (V) CE Energy losses vs Collector Current = 600V CE = 15V Eon GE = 8.2 Ω ...

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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT60GL120JU3 Forward Characteristic of diode 80 ...