APT58M50JCU3 Microsemi Corporation, APT58M50JCU3 Datasheet
APT58M50JCU3
Related parts for APT58M50JCU3
APT58M50JCU3 Summary of contents
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... Drain - Source ON Resistance DSon P Maximum Power Dissipation D I Avalanche current (repetitive and non repetitive) AR These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APT58M50JCU3 V = 500V DSS R = 65mΩ Max @ Tj = 25°C DSon I = 58A @ Tc = 25°C D Application • ...
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... T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight APT58M50JCU3 = 25°C unless otherwise specified j Test Conditions T = 25° 500V 125°C ...
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... Typical Mosfet Performance Curve Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 0.0001 rectangular Pulse Duration (Seconds) APT58M50JCU3 W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) Anode Source Dimensions in Millimeters and (Inches) Single P ulse ...
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... =25° =250V =400V 120 180 240 300 Gate Charge (nC) www.microsemi.com APT58M50JCU3 Low Voltage Output Characteristics 160 V =7,8 &10V 140 GS 120 100 Drain to Source Voltage (V) DS Transfert Characteristics 125 V > I (on)xR ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT58M50JCU3 Single Pulse 0.001 ...