APTGF200U60D4G Microsemi Corporation, APTGF200U60D4G Datasheet
APTGF200U60D4G
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APTGF200U60D4G Summary of contents
Page 1
Single switch NPT IGBT Power Module Absolute maximum ratings Symbol Parameter V Collector - Emitter Breakdown Voltage CES I Continuous Collector Current C I Pulsed Collector Current CM V Gate – Emitter Voltage GE ...
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All ratings @ T Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Collector Current CES V Collector Emitter on Voltage CE(on) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES Dynamic Characteristics Symbol Characteristic C Input Capacitance ...
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Thermal and package characteristics Symbol Characteristic R Junction to Case thJC V RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case ...
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Typical Performance Curve Output Characteristics (V 400 350 T J 300 250 200 150 100 0.5 1 1.5 V (V) CE Transfert Characteristics 400 350 300 250 200 150 T =125°C J 100 ...
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Operating Frequency vs Collector Current 100 ZCS 80 ZVS 60 40 hard 20 switching 100 150 I (A) C maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 ...