APTC90SKM60CT1G Microsemi Corporation, APTC90SKM60CT1G Datasheet

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APTC90SKM60CT1G

Manufacturer Part Number
APTC90SKM60CT1G
Description
Buck Chopper Super Junction Mosfet Sic Chopper Diode
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
Symbol
R
V
V
E
E
I
Super Junction MOSFET
I
P
I
DSon
DM
AR
DSS
AR
AS
D
GS
D
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
SiC chopper diode
7
8
APT0502 on www.microsemi.com
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
Buck chopper
CR2
1
5
6
2
Q1
3
4
Parameter
11
12
NTC
www.microsemi.com
Application
Features
Benefits
V
R
I
D
APTC90SKM60CT1G
DSS
DSon
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
= 59A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
CR1 SiC Schottky Diode
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
-
-
-
-
-
= 900V
Ultra low R
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
= 60mΩ max @ Tj = 25°C
T
T
T
c
c
c
= 25°C
= 80°C
= 25°C
DSon
Max ratings
1940
900
150
±20
462
8.8
2.9
59
44
60
Unit
mJ
W
V
A
V
A
1 – 6

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APTC90SKM60CT1G Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTC90SKM60CT1G V = 900V DSS R = 60mΩ max @ Tj = 25°C DSon I = 59A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F Q Total Capacitive Charge C C Total Capacitance APTC90SKM60CT1G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 900V 125° 0V,V = 900V GS ...

Page 3

... 298.15 K 25/85 25 ∆B ⎡ exp ⎢ B ⎣ (dimensions in mm) SP1 Package outline See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTC90SKM60CT1G CoolMOS SiC Diode To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ...

Page 4

... Drain to Source Voltage (V) DS Capacitance vs Drain to Source Voltage 100000 10000 1000 100 100 125 150 175 200 V , Drain to Source Voltage (V) DS APTC90SKM60CT1G Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Breakdown Voltage vs Temperature 1000 6V 975 950 5V 925 900 25 15 ...

Page 5

... Switching Energy vs Current 4 V =600V DS Eon R =3.8Ω =125°C J L=100µH 2 Eoff Drain Current (A) D www.microsemi.com APTC90SKM60CT1G ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0 Junction Temperature (°C) J Switching Energy vs Gate Resistance Eon Gate Resistance (Ohms) 100 ...

Page 6

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTC90SKM60CT1G Single Pulse 0.001 ...

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