IS62C1024AL Integrated Silicon Solution, Inc., IS62C1024AL Datasheet - Page 3

• Manufacturer Part Number: IS62C1024AL
• Description: 128k X 8 Low Power Cmos Static Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS62C1024AL
IS65C1024AL
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
DC ELECTRICAL CHARACTERISTICS
Note:
1. V
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. H
06/26/08
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Symbol
V
T
P
I
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Symbol Parameter
V
V
V
V
I
I
V
Symbol
C
C
OUT
LO
IL
LI
IH
TERM
STG
T
OH
OL
IH
IL
OUT
IN
(min.) = -0.3V DC; V
(max.) = V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
DD
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
+ 0.3V DC; V
Parameter
Input Capacitance
Output Capacitance
A
(1,2)
= 25°C, f = 1 MHz, V
IL
(min.) = -2.0V AC (pulse width -2.0 ns). Not 100% tested.
IH
(max.) = V
(1)
DD
DD
Test Conditions
V
V
GND ≤ V
GND ≤ V
CE1 = V
CE2 = V
WE = V
+ 2.0V AC (pulse width -2.0 ns). Not 100% tested.
DD
DD
= 5.0V.
(1)
= Min., I
= Min., I
IL
IH
IL
OUT
IN
, or OE = V
, or
(Over Operating Range)
≤ V
OH
≤ V
OL
Conditions
DD
V
V
= 2.1 mA
= –1.0 mA
DD
OUT
IN
1-800-379-4774
= 0V
= 0V
IH
or
Options
–0.5 to +7.0
–65 to +125
Com.
Auto.
Com.
Auto.
Ind.
Ind.
Value
1.0
20
Max.
Min.
-0.5
2.4
2.2
6
8
—
-1
-2
-5
-1
-2
-5
V
DD
Max.
0.4
0.8
—
1
2
5
1
2
5
+ 0.5
Unit
Unit
mA
°C
W
pF
pF
V
Unit
µA
µA
V
V
V
V
3