IS61C3216AL Integrated Silicon Solution, Inc., IS61C3216AL Datasheet - Page 4

• Manufacturer Part Number: IS61C3216AL
• Description: 32k X 16 High-speed Cmos Static Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS61C3216AL
CAPACITANCE
DC ELECTRICAL CHARACTERISTICS
4
Symbol
C
C
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Symbol Parameter
V
V
V
V
I
I
Note:
1. V
LO
LI
OH
OL
IN
OUT
IH
IL
IL
= –3.0V for pulse width less than 10 ns.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Input Capacitance
Output Capacitance
(1,2)
A
= 25°C, f = 1 MHz, V
(1)
Test Conditions
V
V
GND V
Outputs Disabled
GND V
DD
DD
DD
= Min., I
= Min., I
= 5.0V.
Integrated Silicon Solution, Inc. — www.issi.com —
OUT
IN
(Over Operating Range)
Conditions
V
V
OH
OL
V
OUT
IN
DD
V
= 8.0 mA
= –4.0 mA
DD
= 0V
= 0V
Max.
5
7
Com.
Com.
Ind.
Ind.
Unit
pF
pF
Min.
–0.3
2.4
2.2
–1
–2
–1
–2
—
V
DD
Max.
0.4
0.8
—
ISSI
1
2
1
2
+ 0.5
1-800-379-4774
Unit
09/26/05
µA
µA
V
V
V
V
Rev. A
®