MT4S102U TOSHIBA Semiconductor CORPORATION, MT4S102U Datasheet
MT4S102U
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MT4S102U Summary of contents
Page 1
... Symbol Rating Unit CBO CEO V 1.2 V EBO 150 ° −55~150 °C stg 1 MT4S102U Unit:mm 2.1±0.1 1.25±0.1 1. COLLECTOR 2. EMITTER BASE 3. EMITTER 4. USQ ⎯ JEDEC ⎯ JEITA TOSHIBA 2-2K1E Weight: 0.006 g 2007-11-01 ...
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... CBO =1V EBO EB C hFE V =2V, I =15mA =2V, I =0, f=1MHz =2V, I =0, f=1MHz (Note MT4S102U Min Typ. Max Unit ⎯ GHz ⎯ 12.5 15.0 dB ⎯ ⎯ 8.0 dB ⎯ 0.58 0.85 dB ⎯ ⎯ 1.4 dB Min Typ. Max Unit ⎯ ⎯ ...
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... 0.8 1 f=2GHz Ta=25°C 0 100 1 3 MT4S102U COMMON EMITTER VCE=2V Ta=25° 100 Collector-current I (mA 21e C VCE=2V 1V f=1GHz Ta=25°C 10 100 Collector-current I (mA VCE=2V ...
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... 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.1 1 Collector-Base voltage 100 100 125 150 175 Ambient temperature T a 1.8 IE=0 1.6 f=1MHz Ta=25°C 1.4 Cob 1.2 1.0 0.8 Cre 0.6 0.4 0 (V) Collector-current I ( ° MT4S102U NF,Ga VCE=2V f=2GHz 4 Ta=25° 100 (mA) C 2007-11-01 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 MT4S102U 20070701-EN GENERAL 2007-11-01 ...