MT4S101U TOSHIBA Semiconductor CORPORATION, MT4S101U Datasheet

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MT4S101U

Manufacturer Part Number
MT4S101U
Description
Toshiba Transistor Silicon-germanium Npn Epitaxial Planer Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT4S101U
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
UHF LOW NOISE AMPLIFIER APPLICATION
FEATURES
Marking
Absolute Maximum Ratings
Low Noise Figure :NF=0.8dB (@f=2GHz)
High Gain:|S21e|
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
Junction temperature
Storage temperature Range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
2
3
P 7
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE
Characteristics
1
4
2
=16.0dB (@f=2GHz)
Type name
(Ta = 25°C)
Symbol
MT4S101U
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
j
−55~150
Rating
150
1.2
10
30
6
3
5
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.006 g (typ.)
JEDEC
JEITA
TOSHIBA
USQ
1.BASE
2.EMITTER
3.COLLECTOR
4.EMITTER
1.25 ± 0.1
2.1 ± 0.1
MT4S101U
2-2K1E
2007-11-01
Unit: mm

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MT4S101U Summary of contents

Page 1

... Symbol Rating Unit CBO CEO V 1.2 V EBO 150 ° −55~150 °C stg 1 MT4S101U Unit: mm 2.1 ± 0.1 1.25 ± 0.1 1.BASE 2.EMITTER 3.COLLECTOR 4.EMITTER USQ JEDEC ― JEITA ― TOSHIBA 2-2K1E Weight: 0.006 g (typ.) 2007-11-01 ...

Page 2

... Test Condition I V =6V CBO =1V EBO EB C hFE V =2V, I =7mA =2V, I =0, f=1MHz =2V, I =0, f=1MHz (Note MT4S101U Min Typ. Max Unit GHz 13 0.8 1.05 dB Min Typ. Max Unit - - 1 µ µA 200 - 400 - - 0.34 0.6 ...

Page 3

... VCE=2V 2 Ta=25℃ 100 3 MT4S101U 2 |S21e VCE=2V 1V f=2GHz Ta=25℃ 10 COLLECTOR CURRENT I C (mA) Cre,Cob-V CB IE=0 f=1MHz Ta=25℃ Cob Cre 1 COLLECTOR-BASE VOLTAGE 100 125 150 175 AMBIENT TEMPERATURE Ta(℃) 2007-11-01 ...

Page 4

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 MT4S101U 20070701-EN GENERAL 2007-11-01 ...

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