FX6KMJ-2 Renesas Electronics Corporation., FX6KMJ-2 Datasheet - Page 2

• Manufacturer Part Number: FX6KMJ-2
• Description: High-speed Switching Use Pch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
FX6KMJ-2
Electrical Characteristics
Rev.1.00, Aug.20.2004, page 2 of 6
Parameter
Rth(ch-c)
Symbol
V
V
V
r
r
Coss
| y
(BR)DSS
DS(ON)
DS(ON)
Crss
Ciss
t
t
I
I
DS(ON)
V
GS(th)
d(on)
d(off)
GSS
DSS
t
t
t
SD
rr
fs
r
f
|
–100
Min.
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.38
1110
Typ.
–1.5
0.46
0.55
–1.0
108
4.7
44
72
33
80
—
—
—
—
9
8
–1.74
Max.
6.25
–0.1
–2.0
0.58
0.72
–1.5
—
—
—
—
—
—
—
—
—
—
0.1
Unit
mA
C/W
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
I
V
V
I
I
I
I
I
V
f = 1MHz
V
V
R
I
Channel to case
I
D
D
D
D
D
D
S
S
GS
DS
DS
DD
GS
GEN
= –1 mA, V
= –1 mA, V
= –3 A, V
= –3 A, V
= –3 A, V
= –3 A, V
= –3 A, V
= – 6 A, dis/dt = 100 A/ s
= –100 V, V
= –10 V, V
= 20 V, V
= – 50 V, I
= –10 V,
= R
Test conditions
GS
GS
GS
GS
DS
GS
= 50
GS
DS
= –10 V
= – 4 V
= –10 V
= – 5 V
= 0 V
D
DS
GS
(Tch = 25°C)
GS
= 0 V
= –10 V
= –3 A,
= 0 V
= 0 V,
= 0 V