FX6ASJ-2 Renesas Electronics Corporation., FX6ASJ-2 Datasheet - Page 3

• Manufacturer Part Number: FX6ASJ-2
• Description: High-speed Switching Use Nch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

FX6ASJ-2
Performance Curves
Rev.2.00
Aug 07, 2006
–
–20
–16
–12
40
32
24
16
10
–
–
–
–8
–4
–2
8
0
8
6
4
0
0
0
0
0
Power Dissipation Derating Curve
Output Characteristics (Typical)
Drain-Source Voltage V
Gate-Source Voltage V
Gate-Source Voltage (Typical)
Case Temperature Tc (°C)
–
–2
4
On-State Voltage vs.
50
–4V
page 3 of 6
–5V
–
–4
8
V
–10V
100
GS
=
–
–6
P
12
D
= 30W
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
150
–
GS
DS
–8
16
–2.5V
–3.5V
I
(V)
–12A
(V)
D
–3V
–6A
–3A
=
200
–
–10
20
–10
–10
–10
–5.0
–4.0
–3.0
–2.0
–1.0
1.0
0.8
0.6
0.4
0.2
–5
–3
–2
–7
–5
–3
–2
–7
–5
–3
–2
–7
–5
–1
–10
0
1
0
0
–2 –3 –5–7
0
–1
Drain-Source Voltage V
Drain-Source Voltage V
Output Characteristics (Typical)
Maximum Safe Operating Area
–2 –3 –5 –7
On-State Resistance vs.
–2
Drain Current (Typical)
–10
Drain Current I
Tc = 25°C
Single Pulse
0
–3.5V
–4V
–10
–2
–5V
V
–10V
–3 –5–7
–4
GS
0
–2 –3 –5–7
=
–10
–6
V
1
–4V
GS
–10
–2
Tc = 25°C
Pulse Test
D
Tc = 25°C
Pulse Test
=
–3 –5–7
1
P
(A)
D
–2 –3 –5–7
DS
DS
–8
= 30W
–10V
–2.5V
–10
(V)
–3V
(V)
2
–10
–10
–2
2