FX6ASJ-03 Renesas Electronics Corporation., FX6ASJ-03 Datasheet - Page 3

• Manufacturer Part Number: FX6ASJ-03
• Description: High-speed Switching Use Pch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

FX6ASJ-03
Performance Curves
Rev.2.00
– 5.0
– 4.0
– 3.0
– 2.0
–1.0
Nov 21, 2006
–10
– 8
– 6
– 4
– 2
40
32
24
16
Drain Power Dissipation Derating Curve
0
0
8
0
0
0
0
Tc = 25°C
Pulse Test
V
Output Characteristics (Typical)
GS
Drain-Source Voltage V
Gate-Source Voltage V
Gate-Source Voltage (Typical)
Case Temperature Tc (°C)
–1.0
= –10V
– 2
– 8V
On-State Voltage vs.
50
– 2.0
page 3 of 6
– 4
100
– 3.0
– 6
– 7V
150
Tc = 25°C
Pulse Test
– 4.0
P
I
GS
DS
D
– 8
D
– 6A
– 1A
– 3A
= –10A
= 20W
(V)
(V)
– 6V
– 5V
– 4V
– 3V
– 5.0
–10
200
–
– 5.0
– 4.0
–3.0
–2.0
–1.0
–
–
–
10
1.0
0.8
0.6
0.4
0.2
10
10
10
–7
–5
–3
–2
–7
–5
–3
–2
–7
–5
–3
–2
0
–10
–1
0
2
1
0
–2 –3 –5 –7
0
Tc = 25°C
V
–1
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
Single Pulse
GS
Drain-Source Voltage V
Output Characteristics (Typical)
Maximum Safe Operating Area
Drain-Source Voltage V
–2
– 0.4
– 7V
–3 –5–7
= –10V
– 8V
On-State Resistance vs.
Drain Current (Typical)
Drain Current I
–
10
0
–10
–2 –3 –5 –7
– 0.8
0
–2
–3 –5–7
–10V
V
–10
–1.2
GS
1
–10
–2 –3 –5 –7
= – 4V
D
1
tw = 10µs
– 6V
(A)
–1.6
–2
100µs
1ms
10ms
DC
DS
DS
–3 –5–7
–10
(V)
(V)
– 4V
– 3V
– 5V
2
–2.0
–10
–2
2