NSM46211DW6 ON Semiconductor, NSM46211DW6 Datasheet

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NSM46211DW6

Manufacturer Part Number
NSM46211DW6
Description
General Purpose Npn Transistor Transistor And Npn Transistor Transistor With Monolithic Bias Network
Manufacturer
ON Semiconductor
Datasheet
NSM46211DW6T1G
Dual NPN Transistors
General Purpose NPN Transistor and
NPN Transistor with Monolithic Bias
Network
NPN bias resistor transistor with a monolithic bias network; a series
base resistor and a base-emitter resistor. This device is designed to
replace multiple transistors and resistors on customer boards by
integrating these components into a single device.
which is ideal for low power surface mount applications in space
constrained applications.
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
and Q
© Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 0
Collector‐Base Voltage
Collector‐Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector‐Base Voltage
Collector‐Emitter Voltage
Collector Current
NSM46211DW6T1G contains a single NPN transistor with a single
NSM46211DW6T1G is housed in a SC-88/SOT-363 package
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Q1: NPN
Q2: NPN BRT, R1 = R2 = 10 k (typical)
This is a Pb-Free Device
Logic Switching
Amplification
Driver Circuits
Interface Circuits
2
Rating - Q2 (NPN BRT)
, - minus sign for Q
Rating - Q1 (NPN)
(T
1
A
(PNP) omitted)
= 25°C unless otherwise noted, common for Q
V
V
V
Symbol
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
V
V
CBO
CEO
I
I
C
C
Value
Value
100
100
6.0
80
65
50
50
1
mAdc
mAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
1
†For information on tape and reel specifications,
NSM46211DW6T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
N5
M
G
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
Device
ORDERING INFORMATION
(3)
(4)
Q
1
= Device Code
= Date Code*
= Pb-Free Package
MARKING DIAGRAM
http://onsemi.com
SC-88/SOT-363
6
1
CASE 419B
6
STYLE 1
(Pb-Free)
Package
(5)
R
N5 M G
SC-88
1
Publication Order Number:
1
(2)
G
R
NSM46211DW6/D
3000/Tape & Reel
2
Shipping
Q
(1)
(6)
2

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NSM46211DW6 Summary of contents

Page 1

... General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to replace multiple transistors and resistors on customer boards by integrating these components into a single device ...

Page 2

... Collector - Emitter Saturation Voltage (I C Base - Emitter Saturation Voltage ( mA Base - Emitter Saturation Voltage (I = 100 mA Base - Emitter Voltage (I = 2.0 mA Base - Emitter Voltage ( mA NSM46211DW6T1G (T = 25°C unless otherwise noted) A Symbol V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO I CBO = 150° mA ...

Page 3

... C B Output Voltage ( 1.0 kW Output Voltage (off 5 0 1.0 kW Input Resistor Resistor Ratio 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% NSM46211DW6T1G (T = 25°C unless otherwise noted) A Symbol Min I - CBO I - CEO I - EBO V 50 (BR)CBO V 50 (BR)CEO ...

Page 4

... BSC L 0.10 0.20 0.30 0.004 0.008 0.012 H 2.00 2.10 2.20 0.078 0.082 0.086 E STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 0.65 0.025 0.65 0.025 mm ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSM46211DW6/D ...

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