NP161N04TUG Renesas Electronics Corporation., NP161N04TUG Datasheet - Page 6

no-image

NP161N04TUG

Manufacturer Part Number
NP161N04TUG
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
PACKAGE DRAWING (Unit: mm)
TO-263-7pin (MP-25ZT)
EQUIVALENT CIRCUIT
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
6
0.6±0.15
Gate
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
1 2 3
10.0±0.2
10.0±0.2
8
8.4 TYP.
Source
Drain
4
5
6 7
Body
Diode
1.27 TYP.
1. Gata
2, 3, 5, 6, 7. Source
4, 8. Fin (Drain)
4.45±0.2
0.25
1.3±0.2
0.025 to 0.25
Data Sheet D19411EJ1V0DS
NP161N04TUG

Related parts for NP161N04TUG