NP100P04PDG Renesas Electronics Corporation., NP100P04PDG Datasheet - Page 5

• Manufacturer Part Number: NP100P04PDG
• Description: Mos Field Effect Transistor
• Manufacturer: Renesas Electronics Corporation.

10000
-1000
1000
-0.01
-100
100
-0.1
CHANNEL TEMPERATURE
-10
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
8
6
4
2
0
-1
1
-75
-0.1
0
V
V
R
DD
GS
G
t
SWITCHING CHARACTERISTICS
V
d(on)
V
= 0 Ω
-25
= −20 V
= −10 V
F(S-D)
T
GS
ch
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
= −10 V
- Channel Temperature - °C
-1
- Source to Drain Voltage - V
I
D
25
- Drain Current - A
0.5
t
t
t
V
d(off)
f
r
GS
= −4.5 V
-10
75
−10 V
0 V
125
1
-100
I
Pulsed
D
= −50 A
175
Pulsed
Data Sheet D18692EJ3V0DS
-1000
225
1.5
100000
1000
10000
100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
10
-40
-30
-20
-10
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1
0
-0.1
-0.1
0
di/dt = −100 A/μs
V
V
f = 1 MHz
GS
GS
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
50
V
= 0 V
DS
= 0 V
I
F
V
- Drain to Source Voltage - V
- Diode Forward Current - A
DD
100
Q
G
V
= −32 V
-1
DS
- Gate Charge - nC
-1
−20 V
−8 V
150
V
C
C
C
GS
200
iss
oss
rss
NP100P04PDG
-10
-10
250
I
D
= −100 A
300
-100
350
-100
-12
-9
-6
-3
0
5