NIS5112 ON Semiconductor, NIS5112 Datasheet

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NIS5112

Manufacturer Part Number
NIS5112
Description
Electronic Fuse
Manufacturer
ON Semiconductor
Datasheet

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NIS5112
Electronic Fuse
FET driven by an internal charge pump. This switch features a
SENSEFETt which allows for current sensing using inexpensive
chip resistors instead of expensive, low impedance current shunts.
thermal protection circuit.
Features
Typical Applications
© Semiconductor Components Industries, LLC, 2007
August, 2007 - Rev. 7
The NIS5112 is an integrated switch utilizing a high side N-channel
It is designed to operate in 12 V systems and includes a robust
Integrated Power Device
Power Device Thermally Protected
No External Current Shunt Required
Enable/Timer Pin
Adjustable Slew Rate for Output Voltage
9 V to 18 V Input Range
30 mW Typical
Internal Charge Pump
ESD Ratings: Human Body Model (HBM); 4000 V
These are Pb-Free Devices
Hard Drives
Regulator
Voltage
Enable/Timer
Thermal
Enable/
Latch
Timer
3
V
Figure 1. Block Diagram
8
CC
Overvoltage
Charge
Clamp
Pump
GND
1
Current
Slew Rate
Limit
Voltage
dV/dt
2
1
Current Limit
4
Source
5, 6, 7
†For information on tape and reel specifications,
NIS5112D1R2G
NIS5112D2R2G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
8
Device
x
A
Y
WW
G
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
http://onsemi.com
= L for thermal latch off
= H for thermal auto-retry
= Assembly Location
= Year
= Work Week
= Pb-Free Package
SOIC-8 NB
CASE 751
Auto-Retry
(Pb-Free)
(Pb-Free)
Package
Latch Off
SOIC-8
SOIC-8
Publication Order Number:
8
1
Tape & Reel
Tape & Reel
MARKING
DIAGRAM
Shipping
AYWWG
2500 /
2500
NIS5112/D
112x
G

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NIS5112 Summary of contents

Page 1

... NIS5112 Electronic Fuse The NIS5112 is an integrated switch utilizing a high side N-channel FET driven by an internal charge pump. This switch features a SENSEFETt which allows for current sensing using inexpensive chip resistors instead of expensive, low impedance current shunts designed to operate systems and includes a robust thermal protection circuit ...

Page 2

... Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on FR-4 board pad coverage. 2. Actual maximum junction temperature is limited by an internal protection circuit and will not reach the absolute maximum temperature as specified. NIS5112 Description Symbol Steady-State (Input+ to Input-) V ...

Page 3

... Charging Current (Current Sourced into dV/dt Cap -20°C) (Note 25° 100°C) (Note 3) J Max Capacitor Voltage TOTAL DEVICE Bias Current (Device Operational, Load Open, V Minimum Operating Voltage 3. Verified by design. NIS5112 (Unless otherwise noted Symbol T dly ) t out chg R DSon V off ...

Page 4

... NIS5112 140 120 100 80 I _OL LIMIT _SS 20 LIMIT 0 1000 1 Figure 3. Overload vs. Shutdown Time Source Current Limit NIS5112 Enable/ Timer GND dV/ ILimit Figure 4. Typical Application Circuit http://onsemi.com 25° 1 copper, double sided board ...

Page 5

... Input Voltage Output Voltage Figure 5. Turn-on Waveforms for a Resistive Load Input Voltage Output Voltage Load Current ( dV/dt) Figure 6. Turn-on Waveforms for a Load Capacitance of 3,300 mf (C http://onsemi.com NIS5112 Slew Rate = 0.14 V/ms Load Current = 1 mf Slew Rate = 0.14 V/ mf) dt ...

Page 6

... Input Voltage Figure 7. Turn-on Waveforms for an Overvoltage Condition (10 W Resistive Load) Figure 8. Current Waveforms for Overload, Short Circuit and Thermal Shutdown http://onsemi.com NIS5112 V Regulated out Load Current 10 ms/div (2 V/div) (1 A/div) 6 ...

Page 7

... The dV/dt ramp begins with a small step of about 200 mV. This step causes a current surge into the output load capacitance which can be seen in Figure 6. The peak level of this surge will be limited to the overload level of the current limit. NIS5112 DEVICE OPERATION dV/dt Figure 9. dV/dt Circuit ...

Page 8

... Thermal Protection Circuit The temperature limit circuit senses the temperature of the Power FET and removes the gate drive if the maximum level is exceeded. The NIS5112 device has two different thermal limit versions, auto-retry and latch off. Auto-Retry Version The device will shut down when the thermal limit threshold is reached (T back on until the die temperature reduces down to 95° ...

Page 9

... Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. The product described herein (NIS5112), may be covered by one or more of the following U.S. patents: 6,781,502; 7,099,135. Other patents may be pending. SENSEFET is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) ...

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