TPM2828-60 TOSHIBA Semiconductor CORPORATION, TPM2828-60 Datasheet
TPM2828-60
Related parts for TPM2828-60
TPM2828-60 Summary of contents
Page 1
... TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TPM2828-60 PARTIALLY MATCHED TYPE HERMETICALLY SEALED PACKAGE SYMBOL ...
Page 2
... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° Channel Temperature Storage PACKAGE OUTLINE (2-16G6A) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TPM2828-60 SYMBOL UNIT ...
Page 3
... Power Dissipation(PT) vs. Case Temperature(Tc) 200 150 100 DRAWING OF RECOMMENDABLE MATCHING NETWORK INPUT Substrate Material: Teflon (Er=2.8) Thickness: 0.8 mm TPM2828-60 80 120 Tc( ° Unit 200 160 OUTPUT 12 ...