TIM5359-16UL TOSHIBA Semiconductor CORPORATION, TIM5359-16UL Datasheet
TIM5359-16UL
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TIM5359-16UL Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM5359-16UL n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE SYMBOL ...
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... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) 4 – C1.0 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM5359-16UL SYMBOL ...
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... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V DS I 4.4A DS Pin=32.5dBm 5.3 Output Power(Pout) vs. Input Power(Pin) 46 freq.=5.9GHz 45 V =10V TIM5359-16UL 5.4 5.5 5.6 5.7 Frequency (GHz) Pout add 29 31 Pin(dBm) 3 5.8 5 ...
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... Power Dissipation vs. Case Temperature 100 IM3 vs. Output Power Characteristics -10 V =10V DS I 4.4A DS freq.=5.9GHz -20 f=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM5359-16UL 80 120 160 200 37 ...