MBM29LV400TC Fujitsu Microelectronics, Inc., MBM29LV400TC Datasheet - Page 19
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MBM29LV400TC
Manufacturer Part Number
MBM29LV400TC
Description
4m 512k X 8/256k X 16 Bit
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
1.MBM29LV400TC.pdf
(58 pages)
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Autoselect Command
Byte/Word Programming
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the devices reside in the target system. PROM
programmers typically access the signature codes by raising A
voltage onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
Following the command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read
cycle from address XX01H for 16(XX02H for 8) returns the device code (MBM29LV400TC = B9H and
MBM29LV400BC = BAH for 8 mode; MBM29LV400TC = 22B9H and MBM29LV400BC = 22BAH for 16 mode).
(See Tables 4.1 and 4.2.) All manufacturer and device codes will exhibit odd parity with DQ
bit. Sector state (protection or unprotection) will be informed by address XX02H for 16 (XX04H for 8).
Scanning the sector addresses (A
“1” at device output DQ
on the protected sector. (See Tables 2 and 3.)
To terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and
also to write the Autoselect command during the operation, execute it after writing Read/Reset command
sequence.
The devices are programmed on a byte-by-byte (or word-by-word) basis. Programming is a four bus cycle
operation. There are two “unlock” write cycles. These are followed by the program set-up command and data
write cycles. Addresses are latched on the falling edge of CE or WE, whichever happens later and the data is
latched on the rising edge of CE or WE, whichever happens first. The rising edge of CE or WE (whichever
happens first) begins programming. Upon executing the Embedded Program Algorithm command sequence,
the system is not required to provide further controls or timings. The device will automatically provide adequate
internally generated program pulses and verify the programmed cell margin.
The automatic programming operation is completed when the data on DQ
bit at which time the devices return to the read mode and addresses are no longer latched. (See Table 9, Hardware
Sequence Flags.) Therefore, the devices require that a valid address to the devices be supplied by the system
at this particular instance of time. Hence, Data Polling must be performed at the memory location which is being
programmed.
Any commands written to the chip during this period will be ignored. If hardware reset occurs during the
programming operation, it is impossible to guarantee the data are being written.
Programming is allowed in any sequence and across sector boundaries. Beware that a data “0” cannot be
programmed back to a “1”. Attempting to do so may either hang up the device or result in an apparent success
according to the data polling algorithm but a read from read/reset mode will show that the data is still “0”. Only
erase operations can convert “0”s to “1”s.
Figure 20 illustrates the Embedded Program
MBM29LV400TC
0
for a protected sector. The programming verification should be perform margin mode
17
, A
16
, A
15
, A
TM
14
Algorithm using typical command strings and bus operations.
-70/-90/-12
, A
13
, and A
12
/MBM29LV400BC
) while (A
9
to a high voltage. However, multiplexing high
6
, A
1
7
, A
is equivalent to data written to this
0
) = (0, 1, 0) will produce a logical
7
defined as the parity
-70/-90/-12
19