MBM29F160TE Fujitsu Microelectronics, Inc., MBM29F160TE Datasheet - Page 27

• Manufacturer Part Number: MBM29F160TE
• Description: 16m 2m X 8/1m X 16 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

Notes: 1. The l
Parameter
Symbol
DC CHARACTERISTICS
V
V
V
I
I
I
I
V
V
V
V
I
I
CC1
CC2
CC3
CC4
I
LO
LIT
OH1
OH2
LKO
LI
OL
IH
ID
IL
2. l
3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
4. (V
MBM29F160TE
CC
ID
Input Leakage Current
Output Leakage Current
A
Current
V
V
V
V
Input Low Level
Input High Level
Voltage for Autoselect,Sector
Protection, and Temporary
Sector Unprotection
(A
Output Low Voltage Level
Output High Voltage Level
Low V
active while Embedded Erase or Embedded Program is in progress.
9
CC
CC
CC
CC
– V
, OE, RESET Inputs Leakage
9
CC
, OE, RESET) (Note 4)
Active Current (Note 1)
Active Current (Note 2)
Current (Standby)
Current (Standby, RESET)
Parameter Description
current listed includes both the DC operating current and the frequency dependent component.
CC
CC
) do not exceed 9 V.
Lock-Out Voltage
-55/-70/-90
V
V
V
A
CE = V
f = 5 MHz
CE = V
V
RESET = V
V
RESET = WP = V
V
RESET = V
V
WP = V
I
I
I
OL
OH
OH
IN
OUT
CC
9
CC
CC
CC
CC
, OE, RESET = 12.5 V
= 5.8 mA, V
= –2.5 mA, V
= –100 µA
= V
=V
= V
= V
= V
= V
= V
CC
SS
IL
IL
CC
CC
CC
CC
CC
, OE = V
, OE = V
Test Conditions
SS
Max., RESET=V
to V
Max.,
Max., CE = V
Max., CE = V
Max.,
to V
0.3 V
IH
IL
/MBM29F160BE
CC
CC
CC
, V
—
—
—
—
CC
, V
IH
IH
= V
CC
CC
= V
CC
= V
CC
0.3 V
= V
CC
IH
CC
Min.
CC
,
Min.
SS
CC
Max.
0.3 V,
Byte
Word
Max.
0.3 V
V
CC
Min.
–1.0
–1.0
–0.5
11.5
2.0
2.4
3.2
—
—
—
—
—
—
—
—
– 0.4
V
-55/-70/-90
CC
Max.
+1.0
+1.0
12.5
0.45
0.8
4.2
50
40
50
60
—
—
1
5
1
5
+ 0.5
Unit
mA
mA
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
27