OM6508SA International Rectifier Corp., OM6508SA Datasheet - Page 2

• Manufacturer Part Number: OM6508SA
• Description: 500 Volt, 5 And 10 Amp, N-channel Igbt With A Soft Recovery Diode In A Hermetic Metal Package
• Manufacturer: International Rectifier Corp.

PRELIMINARY DATA: OM6508SA
IGBT CHARACTERISTICS
Dynamic
Switching-Resistive Load
Switching-Inductive Load
DIODE CHARACTERISTICS
Parameter - OFF (see Note 1)
V
I
I
Parameter - ON
V
V
V
g
C
C
C
T
t
t
t
t
E
V
I
t
Note 1: Limited by diode I
CES
GES
r
r(Volt)
f
cross
r
rr
fs
(BR)CES
GE(th)
CE(sat)
CE(sat)
d(on)
off
f
ies
oes
res
Collector Emitter
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Emitter Leakage
Current
Gate Threshold Voltage
Collector Emitter
Saturation Voltage
Collector Emitter
Saturation Voltage
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Rise Time
Off Voltage Rise Time
Fall Time
Cross-Over Time
Turn-Off Losses
Maximum Forward Voltage
Maximum Reverse Current
Reverse Recovery Time
r
characteristic.
Min. Typ. Max. Units Test Conditions
500
2.0
260
150
3.0
2.8
2.0
.35
.81
1.2
.95
50
20
37
±100
0.25
150
1.0
4.0
3.0
1.5
1.4
1.5
35
mA
mA
mJ
mA
nA
pF
pF
pF
nS
nS
µS
µS
µS
µA
nS
V
V
V
V
S
V
V
V
I
V
V
T
V
V
V
V
T
V
T
V
V
V
f = 1 mHz
V
V
V
V
L = 0.1 mH, T
I
I
V
V
I
V
C
F
F
F
CE
CE
CE
C
GE
CE
CE
GE
C
GE
C
CE
GE
CE
CC
GE
CEclamp
GE
R
R
R
= 250 µA
= 8 A, T
= 8 A, T
= 1 A, d
= 125°C
= 25°C
= 100°C
= 600 V, T
= 480 V, T
= 30 V, T
= 0
= Max. Rat., V
= 0.8 Max. Rat., V
= ±20 V
= 0 V
= V
= 15 V, I
= 15 V, I
= 20 V, I
= 0
= 25 V
= 400 V, I
= 15 V, R
= 15 V, R
GE
= 400 V, I
, I
i
C
C
/ d
C
= 25°C
= 150°C
C
C
C
j
= 250 µA
t
= 25°C
g
g
C
C
= 5 A
C
j
= -15 A µ/S
= 5 A
= 5 A
= 100°C
= 47
= 100
= 25°C
= 125°C
= 5 A
C
GE
= 5 A
= 0
GE
= 0
PRELIMINARY DATA: OM6509SA
IGBT CHARACTERISTICS
Dynamic
Switching-Resistive Load
Switching-Inductive Load
DIODE CHARACTERISTICS
Parameter - OFF (see Note 1)
V
I
I
Parameter - ON
V
V
V
g
C
C
C
T
T
T
T
T
t
t
E
V
I
t
Note 1: Limited by diode I
CES
GES
f
cross
r
rr
fs
(BR)CES
GE(th)
CE(sat)
CE(sat)
d(on)
r
d(off)
f
d(off)
off
f
ies
oes
res
Collector Emitter
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Emitter Leakage
Current
Gate Threshold Voltage
Collector Emitter
Saturation Voltage
Collector Emitter
Saturation Voltage
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Delay Time
Fall Time
Cross-Over Time
Turn-Off Losses
Maximum Forward Voltage
Maximum Reverse Current
Reverse Recovery Time
r
characteristic.
Min. Typ. Max. Units Test Conditions
500
2.0
2.5
3.0
2.8
±100
1000
1500
0.25
950
140
150
700
500
4.0
2.7
3.0
1.2
1.5
2.0
4.0
1.4
1.5
3.0
1.0
80
35
mA
mA
mA
nA
pF
pF
pF
nS
nS
nS
nS
µS
µS
µS
mJ
µA
nS
V
V
V
V
S
V
V
V
I
V
V
T
V
V
V
V
T
V
T
V
V
V
f = 1 mHz
V
V
V
V
L = 180 µH, T
I
I
V
V
I
V
C
F
F
F
CE
CE
CE
C
GE
CE
CE
GE
C
GE
C
CE
GE
CE
CC
GE
CEclamp
GE
R
R
R
= 16 A, T
= 16 A, T
= 1 A, d
= 250 µA
= 125°C
= 25°C
= 100°C
= 600 V, T
= 480 V, T
= 30 V, T
= 0
= Max. Rat., V
= 0.8 Max. Rat., V
= ±20 V
= 0 V
= V
= 15 V, I
= 15 V, I
= 20 V, I
= 0
= 25 V
= 400 V, I
= 15 V, R
= 15 V, R
GE
= 350 V, I
, I
i
/ d
C
C
C
C
j
= 250 µA
C
C
= 25°C
= 150°C
t
= 25°C
g
g
C
C
C
j
= 10 A
= 10 A
= 10 A
= -15 A µ/S
= 100°C
= 100
= 100
= 10 A
= 25°C
= 125°C
C
GE
= 10 A
= 0
GE
= 0