OM6517SW International Rectifier Corp., OM6517SW Datasheet
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OM6517SW
Manufacturer Part Number
OM6517SW
Description
1200v Discrete Hi-rel Igbt In A D3 Package
Manufacturer
International Rectifier Corp.
Datasheet
1.OM6517SW.pdf
(2 pages)
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-254AA PACKAGE
4 11 R2
Supersedes 2 07 R1
FEATURES
• Isolated IGBTs In A Hermetic Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• High Switching Speed
• Low Tail Current
• Available Screened To MIL-S-19500, TX, TXV and S Levels
• Ceramic Feedthroughs Available
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3Ø motors, UPS and high
power SMPS.
MAXIMUM RATINGS
OM6517SA
OM6526SA
NUMBER
Gate
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA.
PART
SCHEMATIC
Collector
Emitter
MOD PAK
@ 90°C, A
I
C
IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
1000 Volt, 15 And 20 Amp, N-Channel IGBT
In A Hermetic Metal Package
(Cont.)
20
15
V
1000
1000
(BR)CES
2 PLCS.
.125
.290
V
@ 25°C Unless Specified Otherwise
PACKAGE OPTIONS
3.1 - 157
Z-Pak
.940
.740
.540
.300
V
.150
CE (sat)
4.0
4.0
V
Z-TAB
.200
.125 DIA.
(Typ.)
2 PLS.
.500
MIN.
.250
.100
2 PLCS.
MECHANICAL OUTLINE
.540
.040 DIA.
3 PLCS.
T
.260
MAX
.150
f
(Typ.)
300
300
ns
.040
.144 DIA.
°C/W
.685
.665
1.0
1.5
q q
JC
.045
.035
TO-254
.545
.535
6 PIN SIP
125
.150 TYP.
P
85
W
.550
.510
D
.800
.790
.550
.530
150
150
°C
T
OM6517SA
OM6526SA
.260
.249
J
.150 TYP.
.050
.040
.005
3.1
Related parts for OM6517SW
OM6517SW Summary of contents
Page 1
INSULATED GATE BIPOLAR TRANSISTOR (IGBT HERMETIC TO-254AA PACKAGE 1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • Isolated IGBTs In A Hermetic Package • High Input Impedance • Low On-Voltage • High ...
Page 2
PRELIMINARY DATA: OM6517SA IGBT CHARACTERISTICS Parameter - OFF Min. Typ. Max. Units Test Conditions V Collector Emitter 1000 V V (BR)CES CE Breakdown Voltage Zero Gate Voltage 0. CES CE Drain Current 1 ...