MT3S111TU TOSHIBA Semiconductor CORPORATION, MT3S111TU Datasheet
MT3S111TU
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MT3S111TU Summary of contents
Page 1
... Symbol Rating Unit CES CEO V 0.6 V EBO I 100 800 mW C(Note 1) T 150 °C j −55 to 150 T °C stg 1 MT3S111TU Unit: mm 2.1±0.1 1.7±0 BASE 2. EMITTER 3. COLLECTOR UFM JEDEC - JEITA - TOSHIBA 2-2U1B Weight: 6.6 mg (typ.) 2009-03-31 ...
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... Test Condition V CBO V,I = f=1 MHz V f=1 MHz (Note MT3S111TU Min Typ. Max Unit ⎯ GHz ⎯ ⎯ ⎯ 10.5 12.5 dB ⎯ ⎯ 0.6 dB ⎯ 0.85 1.15 dB ⎯ ⎯ 32 dBmW Min Typ ...
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... VCE=5V Ta=25°C IB= 200μA 10 160μA 120μA 5 80μA 40μ (V) CE 2.5 2.0 1.5 1.0 0 500MHz 0.0 100 1 3 MT3S111TU 0.2 0.4 0.6 0.8 Base-emitter voltage V ( Collector-current I (mA) C NF-I C VCE=5V Ta=25° 1GHz 10 Collector-current I (mA) C 2009-03-31 1 100 100 ...
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... Device only 200 100 100 Ambient temperature T 40 IE=0 f=1MHz 35 Ta=25° (V) CB 125 150 ( ) ° MT3S111TU OIP - VCE=5V f1=500MHz f2=501MHz Pin=-15dBmW Ta=25° Collector-current I (mA) C 2009-03-31 100 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 MT3S111TU 2009-03-31 ...