MT3S150P TOSHIBA Semiconductor CORPORATION, MT3S150P Datasheet
MT3S150P
Available stocks
Related parts for MT3S150P
MT3S150P Summary of contents
Page 1
... Note: The device is mounted on a ceramic board (250mm MT3S150P Symbol Rating Unit CBO CEO V 3.0 V EBO 7 300 (Note) 650 150 ° −55~150 °C stg 2 X0.8 mm (t)) 1 MT3S150P Unit: mm JEDEC ― JEITA ― TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 2004-08-23 ...
Page 2
... CBO =2V EBO EB C hFE V =5V, I =50mA =5V, I =0, f=1MHz =5V, I =0, f=1MHz (Note MT3S150P Min Typ. Max Unit ⎯ GHz ⎯ ⎯ ⎯ 9.5 11.5 dB ⎯ ⎯ 0.75 dB ⎯ 0.95 1.5 dB ⎯ ⎯ 35 dBmW Min Typ. ...
Page 3
... Base-emitter voltage (V) Collector-current 1000 1 10 Collector-current I 3 MT3S150P 1.0 1.2 1.4 ( 21e C VCE= f=500MHz Ta=25 ℃ 100 1000 (mA VCE= Ta=25 ℃ 100 1000 ...
Page 4
... Ta=25°C 1.5 Cob 1.0 Cre 0.5 0 Collector-current 100 1 Collector-current I 150 175 ° MT3S150P NF VCE=5V Ga VCE= f=500MHz Ta=25° 100 (mA) C OIP - VCE Pin=-20dBmW f1=100MHz f2=101MHz Ta=25°C 10 100 1000 ...
Page 5
... TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. 5 MT3S150P 030619EAC 2004-08-23 ...