MT3S37T TOSHIBA Semiconductor CORPORATION, MT3S37T Datasheet - Page 2

• Manufacturer Part Number: MT3S37T
• Description: Toshiba Transistor Silicon Npn Epitaxial Planer Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Microwave Characteristics
Electrical Characteristics
Note 1: Cre is measured by 3 terminal method with capacitance bridge.
Caution: This device is sensitive to electrostatic discharge.
Transition Frequency
Insertion Gain
Noise Figure
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Output Capacitance
Reverse Transistor Capacitance
Please make enough tool and equipment earthed when you handle.
Characteristics
Characteristics
(Ta = 25°C)
(Ta = 25°C)
|S21e|
|S21e|
Symbol
Symbol
NF(1)
NF(2)
I
I
hFE
CBO
C
EBO
C
fT
ob
re
2
2
(1)
(2)
V
V
V
V
V
V
V
V
V
V
CE
CE
CE
CE
CE
CB
EB
CE
CB
CB
2
=1V, I
=3V, I
=3V, I
=3V, I
=3V, I
=3V, I
=8V, I
=3V, I
=1V, I
=1V, I
C
C
C
C
C
C
E
C
E
E
Test Condition
Test Condition
=0
=0
=0, f=1MHz
=0, f=1MHz (Note 1)
=20mA, f=2GHz
=20mA, f=1GHz
=20mA, f=2GHz
=3mA, f=1GHz
=3mA, f=2GHz
=20mA
Min
Min
15
15
10
70
-
-
-
-
-
-
Typ.
Typ.
0.66
0.35
0.9
1.2
19
17
12
-
-
-
MT3S37T
2007-11-01
0.65
Max
Max
140
1.8
1.0
1
1
-
-
-
-
GHz
Unit
Unit
dB
dB
dB
dB
µA
µA
pF
pF
-