NP34N055SHE Renesas Electronics Corporation., NP34N055SHE Datasheet

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... DESCRIPTION The NP34N055SHE is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rating • Super low on-state resistance mΩ MAX DS(on) GS • Low 1600 pF TYP. iss iss • Built-in gate protection diode ...

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... µ Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ µ τ ≤ Duty Cycle 1% ch Data Sheet D17522EJ1V0DS NP34N055SHE MIN. TYP. MAX. UNIT µ µ ±10 A 2.0 3.0 4 mΩ 1600 2400 pF 250 380 ...

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... Figure4. SINGLE AVALANCHE ENERGY 120 100 mJ 100 100 25 50 Starting 100 Pulse Width - s Data Sheet D17522EJ1V0DS NP34N055SHE CASE TEMPERATURE 50 75 100 125 150 175 200 T - Case Temperature - ˚C C DERATING FACTOR 100 125 150 ...

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... V GS Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 4.0 3.0 2.0 1.0 0 −50 1000 T ch Data Sheet D17522EJ1V0DS NP34N055SHE DRAIN TO SOURCE VOLTAGE Pulsed Drain to Source Voltage - V Pulsed Gate to Source Voltage - µ I ...

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... C oss rss 1 0.1 100 Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 Q Data Sheet D17522EJ1V0DS NP34N055SHE FORWARD VOLTAGE 1.0 1.5 0.5 t d(off 100 I - Drain Current - ...

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... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 0.5±0.1 No Plating 0 to 0.25 0.5±0.1 Data Sheet D17522EJ1V0DS NP34N055SHE ...

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... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NP34N055SHE Not all M8E 02. 11-1 ...