NP34N055HLE Renesas Electronics Corporation., NP34N055HLE Datasheet - Page 2

• Manufacturer Part Number: NP34N055HLE
• Description: Switching N-channel Power Mosfet
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
= 20
PG.
→
0 V
CHARACTERISTICS
PG.
I
G
V
= 2 mA
50
DD
R
Ω
D.U.T.
G
I
D
= 25
50
I
AS
D.U.T.
Ω
Ω
Note
BV
Note
DSS
Starting T
R
V
DD
V
L
Note
DS
L
V
DD
ch
SYMBOL
R
R
R
V
V
| y
t
t
I
DS(on)1
DS(on)2
DS(on)3
C
Q
Q
Q
Q
I
C
C
GS(th)
d(on)
d(off)
F(S-D)
Q
DSS
GSS
t
t
t
oss
GS
GD
rr
A
fs
iss
rss
G1
G2
r
f
rr
|
= 25°C)
NP34N055HLE, NP34N055ILE, NP34N055SLE
Data Sheet D14154EJ4V0DS
V
0
V
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
V
I
I
I
di/dt = 100 A/
GS
D
F
F
τ = 1 s
Duty Cycle
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
G
DD
DD
GS
= 34 A, V
= 34 A, V
= 34 A
TEST CIRCUIT 2 SWITCHING TIME
= 1 Ω
PG.
= 55 V, V
= ±20 V, V
= V
= 10 V, I
= 10 V, I
= 5 V, I
= 4.5 V, I
= 25 V
= 0 V
= 28 V, I
= 10 V
= 44 V, V
= 44 V
= 5 V
µ
GS
τ
TEST CONDITIONS
, I
≤
D
D
GS
GS
D
D
D
1%
= 250
= 17 A
D
GS
µ
GS
= 17 A
= 0 V
= 0 V
= 17 A
= 17 A
s
DS
= 17 A
R
= 0 V
= 10 V, I
G
D.U.T.
= 0 V
µ
A
D
= 34 A
R
V
L
DD
V
Wave Form
V
Wave Form
GS
DS
MIN.
1.5
9
V
V
V
GS
DS
0
0
DS
10%
t
d(on)
90%
TYP.
2000
250
130
1.0
19
14
17
18
17
11
57
41
23
12
42
58
2
9
7
t
on
10% 10%
t
r
V
GS
t
MAX.
3000
d(off)
±10
380
230
110
2.5
10
18
22
24
37
28
23
72
35
t
off
90%
90%
t
f
UNIT
mΩ
mΩ
mΩ
µ
µ
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A