NP36P04KDG Renesas Electronics Corporation., NP36P04KDG Datasheet - Page 5

• Manufacturer Part Number: NP36P04KDG
• Description: Mos Field Effect Transistor
• Manufacturer: Renesas Electronics Corporation.

1000
-0.01
-100
100
-0.1
30
20
10
-10
10
CHANNEL TEMPERATURE
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
-1
1
-75
-0.1
0
V
V
R
DD
GS
G
V
SWITCHING CHARACTERISTICS
-25
V
= 0 Ω
= −20 V
= −10 V
F(S-D)
T
GS
ch
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
- Channel Temperature - °C
= −10 V
V
I
- Source to Drain Voltage - V
D
GS
25
- Drain Current - A
-1
0.5
= −4.5 V
−10 V
t
t
t
t
d(off)
f
r
d(on)
75
0 V
125
-10
1
I
Pulsed
D
175
= −18 A
Pulsed
Data Sheet D18686EJ3V0DS
-100
225
1.5
10000
1000
1000
100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100
10
-40
-30
-20
-10
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1
0
-0.1
-0.1
0
V
f = 1 MHz
di/dt = −100 A/μs
V
GS
GS
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
V
= 0 V
= 0 V
10
DS
I
F
- Drain to Source Voltage - V
- Diode Forward Current - A
V
Q
DD
G
-1
20
-1
- Gate Charge - nC
= −32 V
V
−20 V
DS
−8 V
30
V
C
C
C
GS
iss
oss
rss
NP36P04KDG
-10
-10
40
I
D
= −36 A
50
-100
-100
60
-12
-9
-6
-3
0
5