MMT08B350T ON Semiconductor, MMT08B350T Datasheet
MMT08B350T
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MMT08B350T Summary of contents
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... High Surge Current Capability: 80 Amps 10 x 1000 msec, for Controlled Temperature Environments • The MMT08B350T3 is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950, UL 1459 & 1950 and FCC Part 68. • Bidirectional Protection in a Single Device • ...
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... V Breakdown Voltage BR V Breakover Voltage BO I Breakover Current BO I Holding Current State Voltage TM MMT08B350T3 (T = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply 1.0 kW 25°C) J Voltage Current Characteristic of TSPD (Bidirectional Device) http://onsemi.com 2 Symbol Max T − 125 ...
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... Peak 100 Value Half Value TIME (ms) Figure 5. Exponential Decay Pulse Waveform MMT08B350T3 400 390 380 370 360 350 340 330 320 80 100 120 140 −60 −40 −20 Figure 2. Typical Breakdown Voltage versus ...
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... MMT08B350T3 TIP GND OUTSIDE PLANT RING PPTC* TIP GND OUTSIDE PLANT RING PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device HEAT COIL TIP OUTSIDE GND PLANT RING HEAT COIL http://onsemi.com TELECOM EQUIPMENT TELECOM EQUIPMENT TELECOM EQUIPMENT 4 ...
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... MAX A 0.160 0.180 4.06 4.57 B 0.130 0.150 3.30 3.81 C 0.075 0.095 1.90 2.41 D 0.077 0.083 1.96 2.11 H 0.0020 0.0060 0.051 0.152 J 0.006 0.012 0.15 0.30 K 0.030 0.050 0.76 1.27 P 0.020 REF 0.51 REF S 0.205 0.220 5.21 5.59 mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MMT08B350T3/D ...