FMC11N60E Fuji Electric holdings CO.,Ltd, FMC11N60E Datasheet - Page 2
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FMC11N60E
Manufacturer Part Number
FMC11N60E
Description
N-channel Silicon Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.FMC11N60E.pdf
(5 pages)
FMC11N60E
0.01
100
200
180
160
140
120
100
0.1
80
60
40
20
20
15
10
10
5
0
1
0
0.01
0
0
Allowable Power Dissipation
PD=f(Tc)
Typical Transconductance
gfs=f(ID):80
Typical Output Characteristics
ID=f(VDS):80
25
5
0.1
µ
s pulse test,VDS=25V,Tch=25 C
µ
s pulse test,Tch=25
50
VDS [V]
10
ID [A]
Tc [
75
1
°
C]
100
15
°
C
10
125
°
20
100
150
2
2
10
10
10
10
10
10
10
10
10
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
10
10
-1
-2
2
1
0
-1
-2
-3
-4
10
1
0
2
0
Safe Operating Area
I
Typical Transfer Characteristic
ID=f(VGS):80
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
-1
D
VGS=4.0V
=f(V
Power loss waveform :
Power loss waveform :
Square waveform
Square waveform
DS
):Duty=0(Single pulse),Tc=25°C
P
P
P
4.5V
t
10
t
D
D
D
3
5
0
µ
s pulse test,VDS=25V,Tch=25
µ
s pulse test,Tch=25 C
VDS [V]
VGS[V]
ID [A]
10
10
4
1
5V
FUJI POWER MOSFET
10
15
5
2
°
°
6V
C
10V
t=
1
10 s
100 s
1ms
DC
20V
10
µ
20
6
s
µ
3
µ