RT3P33M ISAHAYA ELECTRONICS CORPORRATION, RT3P33M Datasheet - Page 2

• Manufacturer Part Number: RT3P33M
• Description: Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
• Manufacturer: ISAHAYA ELECTRONICS CORPORRATION

PRELIMINARY
ELECTRICAL CHARACTERISTICS (Ta=25 ℃)
TYPICAL CHARACTERISTICS
V
I
h
V
V
V
R
R
f
T
CBO
FE
(BR)CEO
CE(sat)
I(ON)
I(OFF)
1
2
Symbol
/R
1
1000
100
10
0.1
10
1
0.0
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
1
Input on voltage -Collector current
Collector current - Input off voltage
0.4
Input of voltage Ｖ Ｉ （ ＯＦ Ｆ ） （ Ｖ ）
Collector current Ｉ Ｃ （ ｍＡ ）
Parameter
0.8
ISAHAYA ELECTRONICS CORPORATION
10
1.2
1.6
I
V
V
I
V
V
-
-
V
C
C
CB
CE
CE
CE
CE
=100μA,R
=10mA,I
2.0
100
=5V,I
=0.2V,I
=5V,I
=-6V,I
=50V,I
C
C
E
=5mA
=100μA
B
E
C
=10mA
=0
=0.5mA
1000
=5mA
Test conditions
BE
100
10
=∞
1
DC forward current gain -Collector current
Collector current Ｉ Ｃ （ ｍＡ ）
Composite Transistor With Resistor
10
Min
-0.8
-50
0.9
50
33
-
-
-
-
For Switching Application
RT3P33M
Silicon Epitaxial Type
Limits
Typ
-0.1
-2.3
-1.1
150
1.0
47
-
-
-
Max
-0.1
-0.3
-5.0
1.1
61
-
-
-
-
100
MH
Unit
μA
kΩ
V
V
V
V
-
-
Z