RT3N66M ISAHAYA ELECTRONICS CORPORRATION, RT3N66M Datasheet - Page 2

• Manufacturer Part Number: RT3N66M
• Description: Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
• Manufacturer: ISAHAYA ELECTRONICS CORPORRATION

PRELIMINARY
ELECTRICAL CHARACTERISTICS (Ta=25℃)
TYPICAL CHARACTERISTICS
V
I
h
V
R
f
T
CBO
FE
(BR)CEO
CE(sat)
1
Symbol
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input resistor
Gain band width product
1000
1000
100
100
10
10
0.1
0
V
V
CE
CE
=5V
=5V
DC forward gain current - Collector current
0.2
Collector current -Input off voltage
0.4
Parameter
Input off voltage VI(OFF) (V)
0.6
ISAHAYA ELECTRONICS CORPORATION
Collector current Ic(mA)
1
0.8
1
1.2
10
1.4
1.6
I
V
V
I
-
V
1.8
C
C
CB
CE
CE
=100μA,R
=10mA,I
=5V,I
=6V,I
100
=50V,I
2
C
E
=1mA
=-10mA
B
E
=0.5mA
Test conditions
=0
BE
0.1
=∞
10
1
0.1
V
CE
=0.2V
Input on voltage - Collector current
Collector current Ic (mA)
1
Composite Transistor With Resistor
Min
100
3.3
50
-
-
-
For Switching Application
10
RT3N66M
Silicon Epitaxial Type
Limits
Typ
200
0.1
4.7
-
-
-
100
Max
6.1
0.1
0.3
-
-
-
MH
Unit
μA
kΩ
V
V
-
Z