ADN2530 Analog Devices, Inc., ADN2530 Datasheet - Page 4

• Manufacturer Part Number: ADN2530
• Description: 11.3 Gbps, Active Back-termination, Differential Vcsel Driver
• Manufacturer: Analog Devices, Inc.

ADN2530
Parameter
POWER SUPPLY
1
2
3
4
5
6
7
8
PACKAGE THERMAL SPECIFICATIONS
Table 2.
Parameter
θ
θ
IC Junction Temperature
The voltage between the pin with the specified compliance voltage and GND.
Specified for T
The pattern used is composed of a repetitive sequence of eight 1s followed by eight 0s at 10.7 Gbps.
Measured using the high speed characterization circuit shown in Figure 3.
The pattern used is K28.5 (00111110101100000101) at 10.7 Gbps rate.
The pattern used is K28.5 (00111110101100000101) at 11.3 Gbps rate.
Only includes current in the ADN2530 VCC pins.
Includes current in ADN2530 VCC pins and dc current in IMODP and IMODN pull-up inductors. See the Power Consumption section for total supply current calculation.
J-TOP
J-PAD
ALS Assert Time
ALS Negate Time
V
I
I
CC
SUPPLY
CC
7
8
GND
A
J2
J3
= −40°C to +85°C due to test equipment limitation. See the Typical Performance Characteristics section for data on performance for T
GND
Z
Z
0
0
= 50Ω
= 50Ω
GND
GND
DC-BLOCK
DC-BLOCK
Min
65
2.6
GND
GND
GND
Z
Z
0
0
= 50Ω
= 50Ω
VMSET
VBSET
GND
Typ
72.2
5.8
AND IMOD
BSET IBMON IBIAS
MSET
VEE
VEE
VCC
DATAP
DATAN
VCC
VCPA
IBIAS
TP1
ALS
Min
3.07
90%
10%
ADN2530
VEE
CPA
VEE
750Ω
TP2
Figure 3. High Speed Characterization Circuit
J8
Max
79.4
10.7
125
GND
ALS
GND
10Ω
IMODN
IMODP
J5
Figure 2. ALS Timing Diagram
VCC
VCC
GND
GND
GND
VEE
VEE
Typ
3.3
27
65
ASSERT TIME
10nF
10nF
Rev. A | Page 4 of 20
10μF
ALS
Unit
°C/W
°C/W
°C
GND
GND
GND
GND
GND
GND
Max
2
10
3.53
32
76
Z
Z
0
0
VEE
= 50Ω
= 50Ω
NEGATE TIME
GND
ALS
BIAS TEE: PICOSECOND PULSE LABS MODEL 5542-219
ADAPTER: PASTERNACK PE-9436 2.92mm FEMALE-TO-FEMALE ADAPTER
ATTENUATOR: PASTERNACK PE-7046 2.92mm 10dB ATTENUATOR
DC-BLOCK: AGILENT BLOCKING CAPACITOR 11742A
Conditions/Comments
Thermal resistance from junction to top of package.
Thermal resistance from junction to bottom of exposed pad.
BIAS TEE
BIAS TEE
GND
GND
Unit
μs
μs
V
mA
mA
ADAPTER
ADAPTER
t
t
Test Conditions/Comments
Rising edge of ALS to fall of IBIAS and IMOD
below 10% of nominal; see Figure 2
Falling edge of ALS to rise of IBIAS and IMOD
above 90% of nominal; see Figure 2
V
V
BSET
BSET
ATTENUATOR
ATTENUATOR
= V
= V
MSET
MSET
= 0 V
= 0 V
OSCILLOSCOPE
50Ω
50Ω
GND
GND
A
= −40°C to +100°C.