ADN2850 Analog Devices, Inc., ADN2850 Datasheet - Page 14

• Manufacturer Part Number: ADN2850
• Description: Nonvolatile Memory, Dual 1024 Position Programmable Resistors
• Manufacturer: Analog Devices, Inc.

ADN2850
TPC 7. Memory Restore During Power-On Reset
TPC 9. I
TPC 8. I
SUPPLY CURRENT RETURNS TO MINIMUM POWER
CONSUMPTION IF INSTRUCTION 0 (NOP) IS
EXECUTED IMMEDIATELY AFTER INSTRUCTION 1
(READ EEMEM)
0.5V/DIV
I
T
W
A
DD
= I A
DD
= 25 C
vs. Time (Save) Program Mode
vs. Time (Read) Program Mode
MIDSCALE
4ms/DIV
4ms/DIV
50 S/DIV
EXPECTED
R
VALUE
WB
(D)
5V/DIV
5V/DIV
5V/DIV
5V/DIV
5V/DIV
5V/DIV
CS
CLK
20mA/DIV
V
I
CS
CLK
SDI
I
2mA/DIV
DD
DD
SDI
–14–
TEST CIRCUITS
Test Circuits 1 to 3 show some of the test conditions used in the
Specifications table.
Test Circuit 3. Common-Mode Leakage Current
0.01
100
0.1
10
Test Circuit 2. Incremental ON Resistance
1
0
Test Circuit 1. Resistor Position Nonlinearity
Error (Rheostat Operation; R-INL, R-DNL)
128
TPC 10. I
V
DUT
V
DD
DUT
SS
B
256
GND
NC
W
A
B
DUT
NC
W
NC
384
NC = NO CONNECT
I
CODE – Decimal
A
B
SW
WB_MAX
NC = NO CONNECT
R
W
WB_FS
V
CODE = 00
SS
512
R
SW
TO V
V
R
MS
= 25k
=
vs. Code
WB_FS
I
DD
CM
0.1V
640
I
I
SW
W
H
V
CM
= 250k
+
_
0.1V
768
T
A
896
= 25 C
1024
REV. B