SQS404EN Vishay, SQS404EN Datasheet
SQS404EN
Related parts for SQS404EN
SQS404EN Summary of contents
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... 0 ° ° stg e, f SYMBOL c PCB Mount R thJA R thJC SQS404EN Vishay Siliconix Power MOSFET d Requirements at: LIMIT UNIT 30 V ± 5 11. 4 175 °C 260 LIMIT UNIT 36 °C/W 4.5 www.vishay.com ...
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... SQS404EN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... On-Resistance vs. Junction Temperature Document Number: 65457 S09-2058-Rev. A, 12-Oct- °C, unless otherwise noted 0.05 0.04 0. 125 °C C 0.02 0.01 0. 100 0.01 0.001 100 125 150 175 SQS404EN Vishay Siliconix ° 125 ° ° 0.0 0.6 1.2 1.8 2 Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SQS404EN Vishay Siliconix TYPICAL CHARACTERISTICS T 0.10 0.08 0.06 0.04 0. 150 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted A - 0.1 - 0.3 - 0 100 T - Junction Temperature (°C) ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65457. Document Number: 65457 S09-2058-Rev. A, 12-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SQS404EN Vishay Siliconix - www.vishay.com 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...