SQS400EN Vishay, SQS400EN Datasheet - Page 3

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SQS400EN

Manufacturer Part Number
SQS400EN
Description
N-channel 40 V D-s 175 ?c Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SQS400EN-T1-GE3
Quantity:
70 000
TYPICAL CHARACTERISTICS T
Document Number: 65362
S09-2056-Rev. A, 12-Oct-09
2.0
1.7
1.4
1.1
0.8
0.5
75
60
45
30
15
40
32
24
16
8
0
0
- 50
0
0
T
C
I
On-Resistance vs. Junction Temperature
- 25
D
= 25 °C
T
V
C
= 13.3 A
GS
= - 55 °C
4
= 10 V thru 3 V
2
V
0
T
DS
Output Characteristics
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
I
Transconductance
T
25
D
C
- Drain Current (A)
= 125 °C
V
8
4
GS
50
= 10 V
V
75
GS
12
= 2 V
6
100
A
125
= 25 °C, unless otherwise noted
16
8
150
175
20
10
0.001
0.05
0.04
0.03
0.02
0.01
0.00
0.01
100
40
32
24
16
0.1
10
8
0
1
0
0.0
0
Source Drain Diode Forward Voltage
0.2
0.6
On-Resistance vs. Drain Current
V
8
V
GS
SD
Transfer Characteristics
T
- Gate-to-Source Voltage (V)
- Source-to-Drain Voltage (V)
C
T
0.4
I
T
= 25 °C
D
J
C
= 150 °C
1.2
- Drain Current (A)
16
= 125 °C
0.6
V
V
GS
GS
1.8
Vishay Siliconix
T
24
= 2.5 V
= 10 V
J
= 25 °C
T
0.8
SQS400EN
C
= - 55 °C
V
2.4
GS
32
www.vishay.com
1.0
= 4.5 V
3
1.2
40
3

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