SQJ960EP Vishay, SQJ960EP Datasheet - Page 4

• Manufacturer Part Number: SQJ960EP
• Description: Automotive Dual N-channel 60 V D-s 175 °c Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS (T
S11-2419-Rev. B, 19-Dec-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.001
- 0.3
- 0.6
- 0.9
- 1.2
0.01
100
0.0
0.1
0.6
0.3
10
10
8
6
4
2
0
1
0.0
- 50 - 25
0
Source Drain Diode Forward Voltage
www.vishay.com
I
V
D
0.2
DS
= 4.5 A
3
= 30 V
V
T
0
SD
J
= 150 °C
Q
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- Source-to-Drain Voltage (V)
g
Threshold Voltage
0.4
T
- Total Gate Charge (nC)
25
J
Gate Charge
- Temperature (°C)
6
50
0.6
I
D
75
= 250 μA
9
T
0.8
100
J
A
= 25 °C
= 25 °C, unless otherwise noted)
I
D
125
= 5 mA
12
1.0
150
1.2
175
15
4
0.25
0.20
0.15
0.10
0.05
0.00
2.0
1.7
1.4
1.1
0.8
0.5
75
72
69
66
63
60
Drain Source Breakdown vs. Junction Temperature
- 50 - 25
- 50 - 25
www.vishay.com/doc?91000
0
I
D
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
= 5.3 A
I
D
T
= 1 mA
J
2
V
0
0
T
T
= 25 °C
GS
J
J
- Junction Temperature (°C)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
25
4
50
50
V
GS
Vishay Siliconix
75
75
Document Number: 67017
= 10 V
6
SQJ960EP
100
100
T
J
= 150 °C
125
125
V
GS
8
= 4.5 V
150
150
175
175
10