SQJ962EP Vishay, SQJ962EP Datasheet - Page 4

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SQJ962EP

Manufacturer Part Number
SQJ962EP
Description
Automotive Dual N-channel 60 V D-s 175 °c Mosfet
Manufacturer
Vishay
Datasheet
TYPICAL CHARACTERISTICS (T
S11-2419-Rev. B, 19-Dec-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.001
0.01
- 0.3
- 0.6
- 0.9
- 1.2
100
0.1
10
10
0.6
0.3
0.0
8
6
4
2
0
1
0.0
- 50 - 25
0
Source Drain Diode Forward Voltage
www.vishay.com
I
V
D
0.2
DS
= 5 A
2
= 30 V
V
T
0
SD
J
= 150 °C
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Q
- Source-to-Drain Voltage (V)
g
Threshold Voltage
0.4
T
- Total Gate Charge (nC)
25
J
Gate Charge
- Temperature (°C)
4
50
0.6
I
D
75
= 250 μA
6
T
0.8
100
A
J
= 25 °C
= 25 °C, unless otherwise noted)
I
D
125
= 5 mA
8
1.0
150
1.2
175
10
4
0.25
0.20
0.15
0.10
0.05
0.00
2.5
2.1
1.7
1.3
0.9
0.5
77
74
71
68
65
62
Drain Source Breakdown vs. Junction Temperature
www.vishay.com/doc?91000
- 50 - 25
- 50 - 25
0
I
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
D
= 4.3 A
I
D
= 1 mA
2
V
0
0
T
T
GS
J
J
- Junction Temperature (°C)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
T
25
J
= 25 °C
4
50
50
Vishay Siliconix
Document Number: 67018
75
75
V
6
GS
SQJ962EP
100
100
= 10 V
T
J
125
= 150 °C
125
V
8
GS
150
150
= 4.5 V
175
175
10

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