SQJ850EP Vishay, SQJ850EP Datasheet
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SQJ850EP
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SQJ850EP Summary of contents
Page 1
... 0 ° ° stg e, f SYMBOL c PCB Mount R thJA R thJC SQJ850EP Vishay Siliconix ® Power MOSFET d Product Requirements at: LIMIT UNIT 60 V ± 20 6.2 4.0 1 1 175 °C 260 LIMIT UNIT 70 °C/W 3 ...
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... SQJ850EP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... °C C 0.08 25 °C 0.06 125 °C 0.04 0.02 0. 100 10 0.1 0.01 0.001 100 125 150 175 SQJ850EP Vishay Siliconix 125 °C 25 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs ...
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... SQJ850EP Vishay Siliconix TYPICAL CHARACTERISTICS T 0.15 0.12 0.09 0.06 125 °C 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted A 0.6 0.3 0.0 - 0.3 - 0.6 - 0.9 25 ° 100 125 T - Junction Temperature (°C) J Drain Source Breakdown vs. Junction Temperature ...
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... Limited °C A 0.1 Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area Square Wave Pulse Duration (s) SQJ850EP Vishay Siliconix Limited P(t) = 0.0001 s P(t) = 0.001 s P(t) = 0.01 s P(t) = 0 100 www.vishay.com 1 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...