SQJ844EP Vishay, SQJ844EP Datasheet
SQJ844EP
Related parts for SQJ844EP
SQJ844EP Summary of contents
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... 0 ° ° stg e, f SYMBOL c PCB Mount R thJA R thJC SQJ844EP Vishay Siliconix Power MOSFET d Requirements at N-Channel MOSFET N-Channel MOSFET LIMIT UNIT 30 V ± 20 6.4 3 ...
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... SQJ844EP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... 0.10 0.08 0.06 0.04 0.02 0. 100 0.1 0.01 0.001 100 125 150 175 SQJ844EP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SQJ844EP Vishay Siliconix TYPICAL CHARACTERISTICS T 0.15 0.12 0.09 0.06 0.03 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted A 0.6 0.3 0.0 - 0 150 ° 0 ° 1 100 125 T - Junction Temperature (° ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65530. Document Number: 65530 S09-2106-Rev. A, 19-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SQJ844EP Vishay Siliconix - www.vishay.com 1 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...