SQJ463EP Vishay, SQJ463EP Datasheet - Page 4

• Manufacturer Part Number: SQJ463EP
• Description: P-channel 40 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

SQJ463EP
Vishay Siliconix
TYPICAL CHARACTERISTICS T
THERMAL RATINGS T
Note
The characteristics shown in the graph. Normalized Transient Thermal Impedance Junction to Case (25 °C) is given for general guidelines only
to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance
characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size
1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application
parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65540.
www.vishay.com
4
0.10
0.08
0.06
0.04
0.02
0.00
0.01
0.1
0
2
1
On-Resistance vs. Gate-to-Source Voltage
10 -
4
Duty Cycle = 0.5
0.2
0.1
2
Single Pulse
V
GS
T
0.02
- Gate-to-Source Voltage (V)
J
= 25 °C
4
0.05
A
= 25 °C, unless otherwise noted
T
Normalized Thermal Transient Impedance, Junction-to-Case
J
6
= 150 °C
10 -
3
A
= 25 °C, unless otherwise noted
8
Square Wave Pulse Duration (s)
10
10 -
2
- 0.1
- 0.4
1.1
0.8
0.5
0.2
- 50
- 25
0
Threshold Voltage
10 -
T
25
J
- Temperature (°C)
1
50
75
I
S09-2182-Rev. A, 26-Oct-09
D
Document Number: 65540
= 250 µA
100
125
I
D
= 1 mA
150
1
175