SQD50N02-04 Vishay, SQD50N02-04 Datasheet - Page 5

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SQD50N02-04

Manufacturer Part Number
SQD50N02-04
Description
Automotive N-channel 20 V D-s 175 ?c Mosfet
Manufacturer
Vishay
Datasheet
THERMAL RATINGS T
Note
The characteristics shown in the graph. Normalized Transient Thermal Impedance Junction to Ambient (25 °C) are given for general guidelines
only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance
characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size
1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application
parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64701.
Document Number: 64701
S09-1401-Rev. A, 27-Jul-09
40
32
24
16
8
0
0.01
Maximum Drain Current vs. Ambient Temperature
0.1
0
2
1
10
-4
25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
T
50
C
- Case Temperature (°C)
10
75
-3
A
Single Pulse
= 25 °C, unless otherwise noted
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
125
10
-2
150
175
Square Wave Pulse Duration (s)
10
-1
1
1000
100
0.1
0.0
10
1
0.1
by R
* V
Limited
GS
DS(on)*
> minimum V
V
10
DS
Single Pulse
Safe Operating Area
- Drain-to-Source Voltage (V)
T
A
1
= 25 °C
GS
at which R
SQD50N02-04
100
Vishay Siliconix
DS(on)
10
is specified
www.vishay.com
10 µs
100 µs
1 ms
10 ms
100 ms
1 s
10 s
100 s, DC
1000
100
5

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