SQD45N05 Vishay, SQD45N05 Datasheet
SQD45N05
Related parts for SQD45N05
SQD45N05 Summary of contents
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... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC SQD45N05-20L Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT 50 V ± 100 101 2 175 °C LIMIT UNIT 60 °C/W 2 ...
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... SQD45N05-20L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... Capacitance Document Number: 64700 S09-1214-Rev. A, 29-Jun- °C, unless otherwise noted ° °C 125 ° SQD45N05-20L Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SQD45N05-20L Vishay Siliconix TYPICAL CHARACTERISTICS 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0. Junction Temperature (°C) J On-Resistance vs. Junction Temperature www.vishay.com °C, unless otherwise noted A 100 10 1 100 125 150 175 T = 150 ° ° 0.3 0.6 0.9 1 Source-to-Drain Voltage (V) SD Source Drain Diode Forward Voltage Document Number: 64700 S09-1214-Rev ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64700. Document Number: 64700 S09-1214-Rev. A, 29-Jun-09 200 100 10 0.1 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SQD45N05-20L Vishay Siliconix Limited by R DS(on °C C Single Pulse 0 Drain-to-Source Voltage ( > ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...