SQD50N06-09L Vishay, SQD50N06-09L Datasheet - Page 3

• Manufacturer Part Number: SQD50N06-09L
• Description: N-channel 60 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS T
Document Number: 68901
S-Pending-Rev. A, 23-Oct-08
4000
3500
3000
2500
2000
1500
1000
100
120
100
500
80
60
40
20
80
60
40
20
0
0
0
0
0
0
C
rss
10
V
10
GS
2
V
V
DS
DS
= 10 thru 5 V
Output Characteristics
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
20
I
D
Capacitance
- Drain Current (A)
C
20
4
oss
30
C
30
iss
6
40
2 V, 3 V
T
A
C
40
4 V
= - 55 °C
8
= 25 °C, unless otherwise noted
50
125 °C
25 °C
10
50
60
0.015
0.012
0.009
0.006
0.003
0.000
100
80
60
40
20
10
0
8
6
4
2
0
0
0
0
V
I
D
V
DS
= 50 A
GS
= 30 V
On-Resistance vs. Drain Current
20
= 4.5 V
10
1
V
GS
Transfer Characteristics
Q
g
- Gate-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
25 °C
- Drain Current (A)
T
40
20
Gate Charge
2
SQD50N06-09L
C
= 125 °C
Vishay Siliconix
60
30
3
- 55 °C
V
www.vishay.com
GS
80
40
4
= 10 V
100
50
5
3