SQD50N03-09 Vishay, SQD50N03-09 Datasheet - Page 4

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SQD50N03-09

Manufacturer Part Number
SQD50N03-09
Description
N-channel 30 V D-s 175 ?c Mosfet
Manufacturer
Vishay
Datasheet
SQD50N03-09
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.05
0.04
0.03
0.02
0.01
0.00
2.00
1.75
1.50
1.25
1.00
0.75
0.50
- 50
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
- 25
V
I
D
GS
Graph to be available
= 15 A
= 10 V
2
upon completion
V
0
GS
T
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
of testing
4
50
75
6
100
A
= 25 °C, unless otherwise noted
125
8
150
175
10
56
52
48
44
40
50
10
- 50
1
0
- 25
Source Drain Diode Forward Voltage
Graph to be available
T
J
= 150 °C
0.3
upon completion
V
0
SD
T
Drain Source Breakdown
vs. Junction Temperature
J
- Source-to-Drain Voltage (V)
- Junction Temperature (°C)
25
of testing
0.6
50
S-Pending-Rev. A, 23-Oct-08
75
Document Number: 68867
0.9
100
T
J
= 25 °C
125
1.2
150
175
1.5

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