CHTB12 C3 Semiconductors, LLC, CHTB12 Datasheet
CHTB12
Manufacturer Part Number
CHTB12
Description
12amp - 400/600/800v - Triac
Manufacturer
C3 Semiconductors, LLC
Datasheet
1.CHTB12.pdf
(2 pages)
Applications
• Heat Regulation
• Light Dimming
• Control of Inductive Loads
ISO9001 Certified
TO-220AB Non-Isolated
TO-220AB Isolated
• Ovens
• Coffee Makers
• Cookers
• Motors
• Transformers
A1
A1
(CHTA12)
(CHTB12)
A2
A2
G
G
G
A1
A2
A2
C3 Semiconductor, LLC
Absolute Maximum Ratings
RMS On-State Current (full sine wave)
Non Repetitive Surge Peak On-State Current
(Full Cycle, Tj Initial = 25
I
Critical rate of rise of on-state current
I
Peak Gate Current @ T
Average Gate Power Dissipation @ Tj = 150
S
O
s I
Electrical Characteristics
I
V
V
I
I
I
dv/dt MIN @ V
(di/dt)c MIN without snubber
Static Characteristics
V
V to MAX @ Threshold Voltage
R d MAX @ Dynamic Resistance
I
I
GENERAL NOTES
2
G
GT
H
L
L
DRM
RRM
1. Minimum IGT is guaranted at 5% of IGT max.
2. For both polarities of A2 referenced to A1
3. All parameters at 25 degrees C unless otherwise specified.
4. Commutating dv/dt = 50V/µs, (exponential to 200Vpk)
o t
p
GT
GD
T
t
l o
=2 x I
MAX @ I
MAX @ I
MAX @ I
r e
MAX @ I
a V
a r
MAX @ V
i t a
MAX @ V
MIN @ V
i t a
MAX @ V
MAX @ V
e g
u l
n o
GT
f e
g n
e T
o V
, tr<100 ns, T
r o
J
m
G
G
T
n u
a t l
TM
u f
e p
= 1.2 I
= 1.2 I
D
= 100 mA
D
>
>
>
>
>
D
i t c
e g
i s
=12 V, R
D
DRM =
DRM =
=17 A, tp = 380µs
a r
=V
=12 V, R
Superior Commutating
Performance at High Temperature
(di/dt)c = 12A/ms @ (dv/dt)c = 50V/µs
Ideal for Most Demanding Applications
Alternistor/No Snubber Type
IGT 35 mA Max.
VDRM/VRMM 400, 600, 800V
g n
= 67%V
n o
u t
C (
DRM
GT
GT
e r
H
e T
V
V
A T
, R
R
RRM
j
RRM
m
L
NOTE 2
j
= 150
n a
L
=
= 30Ω
DRM
e p
˚
S
L
= 30Ω
) C
= 3.3kΩ
1
e g
e
a r
0 5
i r
˚
s e
(gate open)
u t
C ˚
C
NOTES 2 & 4
e r
NOTE 1
NOTE 2
n o
NOTE 2
NOTE 2
R
) y l
n a
e g
NOTE 2
˚
C
Tc = 130˚C
Tc = 120˚C
Tj = 150
T
T
T
T
T
T
T
= j
= j
= j
= j
= j
= j
= j
1
1
5 2
1
1
5 2
1
0 5
0 5
0 5
0 5
0 5
C ˚
C ˚
˚
C ˚
C ˚
C ˚
C ˚
C ˚
C
High Temperature
TO-220AB Iso
CONDITIONS
P O W E R C O M P O N E N T S
p t
TO-220AB
p t
F =50 Hz
F
QI-II-III
QI-II-III
QI-II-III
=
QI-III
=
=
Q-II
0 6
0 1
0 2
CHTA/CHTB12
z H
m
s µ
s
12Amp - 400/600/800V -
SYMBOL
3
2 1
P
I
5 2
5
35mA
0.15V
35mA
50mA
80mA
0 0
T(RMS)
I
G
di/dt
V
1.3V
. 1
. 0
T
µ 5
5 .
I
TSM
A
I
GM
T
A (
ISO
m
2
stg
/ V
V 5
V 8
m
m /
j
A
t
Ω
) V
s µ
A
s
150˚C Series
-40 to +150
-40 to +150
2500 V
RATING
112A
100A/µs
140A
145A
12A
1
4A
W
TRIAC
2
RMS
s
˚
˚
C
C
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CHTB12 Summary of contents
Page 1
... NOTE DRM = RRM DRM = RRM CHTA/CHTB12 High Temperature 150˚C Series 12Amp - 400/600/800V - CONDITIONS SYMBOL TO-220AB I T(RMS) TO-220AB Iso F = TSM ...
Page 2
... For recommended applications and more information contact: USA : Sales Support USA : Sales Support (888) 882-8689 C3 Semiconductors, LLC. 2320 Paseo de las Americas, Ste. 104, San Diego, CA 92154 Email : sales@c3semi.com WEB SITE: http://www.C3semi.com CHTA/CHTB12 High Temperature 150˚C Series 12Amp - 400/600/800V - TRIAC SYMBOL RATING ˚ T ...