2N930 Microsemi Corporation, 2N930 Datasheet - Page 2

• Manufacturer Part Number: 2N930
• Description: Npn Low Power Silicon Transistor
• Manufacturer: Microsemi Corporation

ELECTRICAL CHARACTERISTICS (con’t)
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
(3) Pulse Test: Pulse Width = 300 s, Duty Cycle
Forward-Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
Small-Signal Short-Circuit Forward Current Transfer Ratio
Small-Signal Short-Circuit Input Impedance
Small-Signal Short-Circuit Output Admittance
Output Capacitance
Noise Figure
V
I
I
I
I
I
I
I
V
V
V
Test 2: f = 1.0 kHz
Test 3: f = 10 kHz
Test 1: f = 100 Hz
C
C
C
C
C
C
C
CB
CB
CB
CE
= 10 mAdc, I
= 10 mAdc, I
= 10 Adc, V
= 500 Adc, V
= 10 mAdc, V
= 500 Adc, V
= 1.0 mAdc, V
= 5.0 Vdc, I
= 5 Vdc; I
= 5.0 Vdc, I
= 5.0 Vdc, I
C
B
B
E
CE
= 10 Adc; R
CE
E
E
CE
= 0.5 mAdc
= 0.5 mAdc
CE
CE
= 1.0 mAdc, f = 1.0 kHz
= 0, 100 kHz
= 1.0 mAdc, f = 1.0 kHz
= 5.0 Vdc
= 5.0 Vdc
= 5.0 Vdc
= 5.0 Vdc, f = 30 MHz
= 5.0 Vdc, f = 1.0 kHz
Characteristics
(3)
g
=10k
f
1.0 MHz
2.0%.
2N930, JAN SERIES
Symbol
V
V
C
h
CE(sat)
BE(sat)
h
NF
h
h
h
obo
FE
ob
fe
fe
ib
Min.
100
150
150
0.6
1.5
25
Max.
300
600
600
1.0
1.0
6.0
1.0
8.0
32
5
3
3
Page 2 of 2
Unit
Vdc
Vdc
dB
pF
120101