VP0120 Supertex, Inc., VP0120 Datasheet - Page 2

• Manufacturer Part Number: VP0120
• Description: P-channel Enhancement-mode Vertical Dmos Fets
• Manufacturer: Supertex, Inc.

Thermal Characteristics
*
Electrical Characteristics
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
I
D
OUTPUT
Package
TO-92
Symbol
BV
V
∆V
I
I
I
R
∆R
G
C
C
C
t
t
t
t
V
t
(continuous) is limited by max rated T
GSS
DSS
D(ON)
d(ON)
r
d(OFF)
f
rr
GS(th)
DS(ON)
ISS
OSS
RSS
SD
FS
INPUT
GS(th)
DSS
DS(ON)
-10V
V
0V
0V
DD
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
Gate Body Leakage
Zero Gate Voltage Drain Current
ON-State Drain Current
Change in R
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
Static Drain-to-Source
ON-State Resistance
I
D
(continuous)*
10%
t
-0.1A
d(ON)
t
(ON)
GS(th)
DS(ON)
j
Parameter
.
t
10%
r
with Temperature
with Temperature
90%
90%
I
D
t
-0.35A
d(OFF)
(pulsed)
t
90%
(OFF)
(@ 25°C unless otherwise specified)
10%
t
F
Power Dissipation
-200
-100
-350
Min
-1.5
50
7-224
@ T
1.0W
C
= 25
-400
-750
Typ
-1.0
500
6.0
0.6
25
15
70
50
10
5
4
4
4
4
°
C
Max
-100
GENERATOR
-3.5
-10
40
25
60
30
10
10
10
10
11
-1
PULSE
°
125
C/W
θ
INPUT
R
jc
gen
mV/°C
%/°C
Unit
mA
m
mA
nA
µA
pF
ns
ns
Ω
V
V
V
°
170
C/W
θ
I
V
I
V
V
V
T
V
V
V
V
V
V
V
f = 1 MHz
V
I
R
I
I
D
ja
D
D
SD
SD
A
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
DD
GEN
= -1.0mA, V
= -1.0mA, V
= -350mA
= 125°C
= -0.5A, V
= -0.5A, V
= -10V, I
= -25V, I
= 0V, V
= V
= ±20V, V
= 0V, V
= 0V, V
= -5V, V
= -10V, V
= -5V, I
= -10V, I
= -25V
= 25Ω
DS
Conditions
, I
-0.1A
I
D
DS
D
DS
DS
DR
DS
D
D
D
= -50mA
GS
GS
= -1.0mA
DS
GS
DS
= -25V
V
*
= -100mA
= -100mA
= Max Rating
= 0.8 Max Rating
= -100mA
GS
= -25V
DD
= 0V
= 0V
= -25V
= 0V
= 0V
= V
R
L
DS
D.U.T.
OUTPUT
-0.35A
VP0120
I
DRM