7MBP75RTB060 Fuji Electric holdings CO.,Ltd, 7MBP75RTB060 Datasheet - Page 2
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7MBP75RTB060
Manufacturer Part Number
7MBP75RTB060
Description
Igbt - Ipm
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.7MBP75RTB060.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
7MBP75RTB060
Manufacturer:
FUJI
Quantity:
1 000
Part Number:
7MBP75RTB060
Quantity:
50
7MBP75RTB060
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
Input zener voltage
Alarm signal hold time
Limiting resistor for alarm
Junction to Case thermal resistance
Case to fin thermal resistance with compound
Common mode rectangular noise
Common mode lightning surge
DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
Turn-on time
Turn-off time
Reverse recovery time
Maximum Avalanche Energy
(A non-repetition)
Over Current Protection Level of Inverter circuit
Over Current Protection Level of brake circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Over Heating Protection Hysteresis
Over Heating Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Protection Section ( Vcc=15V)
Thermal characteristics( Tc=25°C)
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Recommendable value
Control circuit
Main circuit
Collector-Emitter saturation voltage
Collector current at off signal input
Forward voltage of Diode
Collector-Emitter saturation voltage
Collector current at off signal input
Forward voltage of FWD
Item
Item
Item
Item
Item
Item
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
Interval 20s, 10 times
Judge : no over-current, no miss operating
INV
Brake
I
I
V
V
t
R
Symbol
I
V
V
I
V
V
I
t
t
T
T
T
T
V
V
ton
toff
trr
P
ALM
ccp
CCN
OC
CES
CES
DOC
SC
Condition
in(th)
ALM
Symbol
jOH
COH
Z
jH
CH
CE(sat)
CE(sat)
UV
F
F
AV
H
Symbol
IGBT
IGBT
FWD
IC=75A Fig.1, Fig.6
VDC=300V, IC=75A Fig.1, Fig.6
V
Ic=75A
Ic=75A
V
Ic=50A
-Ic=50A
VDC=300V,Tj=125°C
Switching Trequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
OFF
Rin=20k ohm
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C Fig.4
surface of IGBT chips
VDC=0V, Ic=0A, Case temperature
Main circuit wiring inductace=54nH
Internal wiring inductance=50nH
CE
CE
Condition
Condition
=600V Vin terminal open.
=600V Vin terminal open.
Condition
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
Symbol
Terminal
Chip
Terminal
Chip
Terminal
Chip
Terminal
Chip
V
V
Symbol
-
DC
CC
Min.
Min.
Min.
-
-
-
-
±2.0
±5.0
13.5
2.5
Min.
-
40
1.2
-
-
-
-
-
-
-
-
-
-
-
-
1425
Min.
Min.
1.1
113
-
-
150
-
110
-
Typ.
75
Typ.
15.0
11.0
Typ.
0.05
-
-
-
-
-
-
0.2
-
-
-
-
1.00
1.25
-
-
Typ.
2.0
1.6
1.75
1.9
-
-
-
-
-
-
-
-
-
-
1500
Typ.
Typ.
400
20
20
2.0
Max.
-
-
-
-
Max.
16.5
0.5
5
0.63
0.855
0.63
Max.
1.35
1.60
8.0
-
-
-
-
-
3.0
-
-
Max.
IGBT-IPM
-
1.0
2.4
2.6
1.0
2.2
3.3
3.6
0.3
-
-
-
-
-
-
1575
125
Max.
18
65
Max.
12.5
°C/W
°C/W
°C/W
°C/W
-
-
-
4.0
8
-
-
-
-
-
-
-
Unit
1.70
1.95
Unit
Unit
kV
kV
Nm
V
V
Unit
-
mA
mA
Unit
mJ
ohm
Unit
µs
mA
mA
ms
ms
ms
V
V
V
V
V
V
V
V
A
A
µs
µs
°C
°C
°C
V